UT28F256QLE Radiation-Hardened 5V 32K x 8 PROM

SKU:
UT28F256QLE
Availability:
est. 10 week lead time for HiRel; 8 week lead time for prototypes; 16 weeks for QML Q and 18 weeks for QML V

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The UT28F256QLE amorphous silicon redundant Via Link TM PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256QLE PROM features fully asynchronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256QLE. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256LQLE ideal for high speed systems designed for operation in radiation environments.

DATASHEET

RADIATION HARDENED PROM APPLICATIONS

  • Configuration storage for FPGAs/reconfiguration
  • Processor Code Storage: Boot/ Application
  • Re-writeable data logs
  • General Data storage
  • Secondary storage

FEATURES

  • Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory
    • Supported by industry standard programmer
  • 65ns maximum address access time (-55°C to +125°C)
  • 5V operating voltage 
  • Three-state data bus
  • Low operating and standby current
    • Operating: 50.0mA maximum @15.4MHz
      • Derating: 1.7mA/MHz
    • Standby: 1.0mA maximum (post-rad)
  • Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
    • Total dose: 100Krad to 1Megarad(Si)
    • Onset LET: 40 MeV-cm2/mg
    • SEL Immune >110 MeV-cm2/mg
ECCN:
9A515.e.2

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