UT8MR2M8 16 Megabit Non-Volatile MRAM


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Minimum Purchase:
5 units
Maximum Purchase:
250 units

The Cobham 16Megabit Non-Volatile magnetoresistive random access memory (MRAM) is a highperformance memory compatible with traditional asynchronous SRAM operations, organized as a 2,097,152 words by 8bits.  The MRAM is equipped with chip enable (/E), write enable (/W), and output enable (/G) pins, allowing for significant system design flexibility without bus contention. Data is non-volatile for > 20 year retention at temperature and data is automatically protected against power loss by a low voltage write inhibit.  The 16Mb MRAM is designed specifically for operation in HiRel environments. As shown in Table 3, the magneto-resistive bit cells are immune to Single Event Effects (SEE). To guard against transient effects, an Error Correction Code (ECC) is included within the device. ECC check bits are generated and stored within the MRAM array during writes. If a single bit error is found during a read cycle, it is automatically corrected in the data presented to the user.


 Single 3.3-V power supply read/write
 Fast 45ns read/write access time
 Functionally compatible with traditional asynchronous SRAMs
 Equal address and chip-enable access times
 HiRel temperature range (-40oC to 105oC)
 Automatic data protection with low-voltage inhibit circuitry to prevent writes on power loss
 CMOS and TTL compatible
 Data retention: 20 years (-40oC to 105oC)
 Read/write endurance: unlimited for 20 years (-40oC to 105oC)
 Operational environment:
- Total dose: 1Mrad(Si)
- SEL Immune: 112 MeV-cm2/mg @125oC
- SEU Immune: Memory Cell 112 MeV-cm2/mg @25oC
 Two 40-pin package options available
 Standard Microelectronics Drawing 5962-12227
- QML Q, Q+ and V (V pending contact factory)


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