UT8Q512E 3V 4Megabit QCOTS SRAM

The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (E), an active LOW Output Enable (G), and three-state drivers.

DATASHEET

FEATURES

• 20ns maximum (3.3 volt supply) address access time
• Asynchronous operation for compatibility with industry-standard 512K x 8 SRAMs
• TTL compatible inputs and output levels, three-state bidirectional data bus
• Operational environment:
  • Total dose: 100 krads(Si)
• SEL Immune 110 MeV-cm2/mg
• SEU Onset LETth: 2.8 MeV-cm2/mg 
• Saturated Cross Section 2.8E-8 cm2/bit<1.1E-9 errors/bit-day, Adams 90% worst case environment geosynchronous orbit
• Packaging:
  • 36-lead ceramic flatpack (3.831 grams)
• Standard Microcircuit Drawing 5962-99607
  • QML Q & V compliant part