UT8Q512E 3V 4Megabit QCOTS SRAM

SKU:
UT8Q512E

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Minimum Purchase:
5 units
Maximum Purchase:
250 units

The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (E), an active LOW Output Enable (G), and three-state drivers.

DATASHEET

FEATURES

  • 20ns maximum (3.3 volt supply) address access time
  • Asynchronous operation for compatibility with industry-standard 512K x 8 SRAMs
  • TTL compatible inputs and output levels, three-state bidirectional data bus
  • Operational environment:
    • Total dose: 100 krads(Si)
  • SEL Immune 110 MeV-cm2/mg
  • SEU Onset LETth: 2.8 MeV-cm2/mg 
  • Saturated Cross Section 2.8E-8 cm2/bit<1.1E-9 errors/bit-day, Adams 90% worst case environment geosynchronous orbit
  • Packaging:
    • 36-lead ceramic flatpack (3.831 grams)
  • Standard Microcircuit Drawing 5962-99607
    • QML Q & V compliant part

 

ECCN:
9A515.e.1

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